| PART |
Description |
Maker |
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| CGH35015F |
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| KP6F-23W KP8F-23W KPR13F-23 KPR8F-23 |
2300 MHz - 2700 MHz PARABOLIC ANTENNA, 30.9 dBi GAIN, 4.2 deg 3dB BEAMWIDTH
2300 MHz - 2700 MHz PARABOLIC ANTENNA, 32.5 dBi GAIN, 3.3 deg 3dB BEAMWIDTH
2300 MHz - 2500 MHz PARABOLIC ANTENNA, 36.5 dBi GAIN, 2.3 deg 3dB BEAMWIDTH
2300 MHz - 2500 MHz PARABOLIC ANTENNA, 32.3 dBi GAIN, 3.4 deg 3dB BEAMWIDTH
|
CommScope, Inc.
|
| MAGX-001214-SB0PPR MAGX-001214-125L00 MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| 23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor
0.3 Watts, 15 Volts, Class A Linear to 2300 MHz
|
GHZTECH[GHz Technology]
|
| CLF1G0035-100P CLF1G0035S-100P |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CLF1G0035S-50 CLF1G0035-50 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CG2H80030D |
30 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| TGI8596-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| CG2H80060D |
60 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
|
